IRF540 IRF640 IRF740 IRF840 N-Channel Power MOSFET TO-220

Description : Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Feature : - IRF540 • Vds : 100 V • Vgs : ±20 V • Rds : 0.077 Ω (Vgs = 10V) • Id : 28 A (Vgs = 10V, 25°C) - IRF640 • Vds : 200 V • Vgs : ±20 V • Rds : 0.18 Ω (Vgs = 10V) • Id : 18 A (Vgs = 10V, 25°C) - IRF740 • Vds : 400 V • Vgs : ±20 V • Rds : 0.55 Ω (Vgs = 10V) • Id : 10 A (Vgs = 10V, 25°C) - IRF840 • Vds : 500 V • Vgs : ±20 V • Rds : 0.85 Ω (Vgs = 10V) • Id : 8 A (Vgs = 10V, 25°C)