HY4008W มอสเฟต Mosfet DC-DC Converter ยี่ห้อ Huayi

Type Designator: HY4008W Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 397 W Maximum Drain-Source Voltage |Vds|: 80 V Maximum Gate-Source Voltage |Vgs|: 25 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 200 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 195 nC Rise Time (tr): 18 nS Drain-Source Capacitance (Cd): 1029 pF Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm Package: TO247