1ชิ้น มอสเฟต IRF3205 N-channel power MOSFET

มอสเฟต IRF3205 N-Channel Power MOSFET 55V 110A 200W    Type Designator: IRF3205    Type of Transistor: MOSFET    Type of Control Channel: N -Channel    Maximum Power Dissipation (Pd): 200 W    Maximum Drain-Source Voltage |Vds|: 55 V    Maximum Gate-Source Voltage |Vgs|: 20 V    Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V    Maximum Drain Current |Id|: 110 A    Maximum Junction Temperature (Tj): 175 °C    Total Gate Charge (Qg): 146(max) nC    Rise Time (tr): 101    Drain-Source Capacitance (Cd): 781 pF    Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm    Package: TO220AB จำนวน:1ชิ้น